Measurement of semiconductor energy gap using absorption spectrum
Identifieur interne : 012D46 ( Main/Repository ); précédent : 012D45; suivant : 012D47Measurement of semiconductor energy gap using absorption spectrum
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Abstract
In this paper a homemade grating spectrometer and simple electronics allow measurements of the energy gap, Eg, of semiconductors at room temperature. This experiment involves electron-hole pair production by optical excitation, i.e., by internal photoelectric effect. Only absorption spectrum is used to determine Eg. The Eg of Si, GaAs and InP are determined in this paper. The energy gap is derived from measurements of the change in electrical resistance and the light transmitted through the semiconductor sample as a function of the light wavelength. Suggestions are also provided to determine Eg'of lower bang gap materials, (i.e. InAs, Eg=0.34 eV) utilizing this experimental setup.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Measurement of semiconductor energy gap using absorption spectrum</title><author><name sortKey="Islam, M S" uniqKey="Islam M">M. S. Islam</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET)</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka 1000</wicri:noRegion></affiliation></author><author><name sortKey="Zahirul Alam, A H M" uniqKey="Zahirul Alam A">A. H. M. Zahirul Alam</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET)</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka 1000</wicri:noRegion></affiliation></author><author><name sortKey="Huda, M Q" uniqKey="Huda M">M. Q. Huda</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET)</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka 1000</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0427273</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0427273 INIST</idno><idno type="RBID">Pascal:00-0427273</idno><idno type="wicri:Area/Main/Corpus">012654</idno><idno type="wicri:Area/Main/Repository">012D46</idno></publicationStmt><seriesStmt><idno type="ISSN">1017-2653</idno><title level="j" type="main">SPIE proceedings series</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Band structure</term><term>Binary compounds</term><term>Electron hole pair</term><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium phosphides</term><term>Inorganic compounds</term><term>Instrumentation</term><term>Measuring methods</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure bande</term><term>Bande interdite</term><term>Paire électron trou</term><term>Spectre absorption</term><term>Méthode mesure</term><term>Appareillage</term><term>Matériau semiconducteur</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium phosphure</term><term>Composé minéral</term><term>Composé binaire</term><term>7155E</term><term>GaAs</term><term>As Ga</term><term>InP</term><term>In P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper a homemade grating spectrometer and simple electronics allow measurements of the energy gap, Eg, of semiconductors at room temperature. This experiment involves electron-hole pair production by optical excitation, i.e., by internal photoelectric effect. Only absorption spectrum is used to determine Eg. The Eg of Si, GaAs and InP are determined in this paper. The energy gap is derived from measurements of the change in electrical resistance and the light transmitted through the semiconductor sample as a function of the light wavelength. Suggestions are also provided to determine Eg'of lower bang gap materials, (i.e. InAs, E<sub>g</sub>=0.34 eV) utilizing this experimental setup.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1017-2653</s0></fA01><fA05><s2>3975</s2></fA05><fA06><s3>p.1</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Measurement of semiconductor energy gap using absorption spectrum</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Physics of semiconductor devices : Delhi, 14-18 December 1999</s1></fA09><fA11 i1="01" i2="1"><s1>ISLAM (M. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZAHIRUL ALAM (A. H. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>HUDA (M. Q.)</s1></fA11><fA12 i1="01" i2="1"><s1>VIKRAM KUMAR</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>AGARWAL (S.K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET)</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>International Society for Optical Engineering</s1><s2>Bellingham WA</s2><s3>USA</s3><s9>patr.</s9></fA18><fA20><s1>234-238</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-3601-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000090086580420</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0427273</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>SPIE proceedings series</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper a homemade grating spectrometer and simple electronics allow measurements of the energy gap, Eg, of semiconductors at room temperature. This experiment involves electron-hole pair production by optical excitation, i.e., by internal photoelectric effect. Only absorption spectrum is used to determine Eg. The Eg of Si, GaAs and InP are determined in this paper. The energy gap is derived from measurements of the change in electrical resistance and the light transmitted through the semiconductor sample as a function of the light wavelength. Suggestions are also provided to determine Eg'of lower bang gap materials, (i.e. InAs, E<sub>g</sub>=0.34 eV) utilizing this experimental setup.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A55E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Structure bande</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Band structure</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Bande interdite</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Energy gap</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Paire électron trou</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electron hole pair</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Par electrón hueco</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Méthode mesure</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Measuring methods</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Appareillage</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Instrumentation</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>12</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>13</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé minéral</s0><s5>18</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé binaire</s0><s5>19</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Binary compounds</s0><s5>19</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7155E</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>283</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International workshop on the physics of semiconductor devices</s1><s2>10</s2><s3>Delhi IND</s3><s4>1999-12-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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